CHARACTERIZATION OF TIN DOPED TITANIUM DIOXIDE THIN FILMS PREPARED BY SILAR METHOD

Author (s) : Dr.D.GOPINATH and Mrs.K.JAYANTHI

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Abstract :
The Titanium dioxide and Tin-doped Titanium dioxide thin films were are deposited by Successive lonic Layer Adsorption and Reaction (SILAR) technique. The prepared samples were Characterized using X-ray diffraction, Ultraviolet-visible spectroscopy, photoluminescence and Fourier transform infrared spectroscopy The XRD pattern of the films confirmed tetragonal structure with the polycrystalline nature. The optical transmittance was increased with the decrease in the optical energy band gap. The optical constants such as extinction coefficient and refractive index were determined. The intensity of the photoluminescence emission was observed at 700 nm for doped films. The Fourier Transform Infrared Spectroscopy confirms that a T102 phase has been formed. The field dependent conductivity showed an insignificant rise in photocurrent for Ti07 which was in conformity with its wide band gap nature Key Word Thin films, Dip coating method, XRD, UV,PL.

Keywords : SILAR technique, XRD, UV, PL

Conference Date : 30/08/2019

Pages : 124

Paper ID : 19122