CHARACTERISATION OF GALLIUM DOPED TIN OXIDE THIN FILMS PREPARED BY DIP COATING METHOD

Author (s) : Dr.T.GNANASAMBANDAN and Mrs.S.GOMATHI

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Abstract :
The Titanium oxide and Ga-doped Titanium oxide thin films were are deposited by Dip Coating Method technique. The prepared samples were Characterized using X-ray diffraction, Ultraviolet-visible spectroscopy, photoluminescence and Fourier transform infrared spectroscopy. The XRD pattern of the films confirmed tetragonal structure with the polycrystalline nature. The optical transmittance was increased with the decrease in the optical energy band gap. The optical constants such as extinction coefficient and refractive index were determined. The intensity of the photoluminescence emission was observed at 700 nm for doped films. The Fourier Transform Infrared Spectroscopy confirms that a (SnO₂) phase has been formed. The field dependent conductivity showed an insignificant rise in photocurrent for (SnO₂) which was in conformity with its wide band gap nature.

Keywords : Thin films, Dip coating method, XRD, UV PL A statistical control chart for monitoring customer Waiting time

Conference Date : 30/08/2019

Pages : 126

Paper ID : 19124